The magnetophonon effect due to resonant interactions of charge carriers with optical phonons in nondegenerate polar semiconductors is studied when several elastic scattering mechanisms are simultaneously active also.The simple model of the band structure, and the displaced Maxwellian distribution function are used.Analytical expressions for drift mobility are given for B = O and the quantum limit, and are compared with the results of other techniques where possible.The numerical calculations show that whenever magnetophonon oscillations are seen in the ohmic regime, maxima occur near the resonance magnetic fields for all lattice temperature and strengths of scattering mechanisms which compete with the optical phonon scattering.(Author)
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Chicago
National Institute of Standards and Technology (NIST), Commerce Department. "Longitudinal Magnetoresistance in Polar Semiconductors". Government. Commerce Department, January 1, 1972. https://www.govinfo.gov/app/details/GOVPUB-C13-7a40c7f66cbd2a8e2771fed2266dbde5
APA
National Institute of Standards and Technology (NIST), Commerce Department. (1972, January 1). Longitudinal Magnetoresistance in Polar Semiconductors. [Government]. Commerce Department. https://www.govinfo.gov/app/details/GOVPUB-C13-7a40c7f66cbd2a8e2771fed2266dbde5
MLA
National Institute of Standards and Technology (NIST), Commerce Department. Longitudinal Magnetoresistance in Polar Semiconductors. Commerce Department, (1 Jan 1972), https://www.govinfo.gov/app/details/GOVPUB-C13-7a40c7f66cbd2a8e2771fed2266dbde5
Bluebook
National Institute of Standards and Technology (NIST), Commerce Department, Longitudinal Magnetoresistance in Polar Semiconductors, GovInfo, (January 1, 1972), https://www.govinfo.gov/app/details/GOVPUB-C13-7a40c7f66cbd2a8e2771fed2266dbde5
