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         <title>Longitudinal Magnetoresistance in Polar Semiconductors</title>
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         <topic> Transport theory</topic>
         <topic>Magnetoresistance</topic>
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    <abstract>The magnetophonon effect due to resonant interactions of charge carriers with optical phonons in nondegenerate polar semiconductors is studied when several elastic scattering mechanisms are simultaneously active also.The simple model of the band structure, and the displaced Maxwellian distribution function are used.Analytical expressions for drift mobility are given for B = O and the quantum limit, and are compared with the results of other techniques where possible.The numerical calculations show that whenever magnetophonon oscillations are seen in the ohmic regime, maxima occur near the resonance magnetic fields for all lattice temperature and strengths of scattering mechanisms which compete with the optical phonon scattering.(Author)</abstract>
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         <topic> Transport theory</topic>
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