[Federal Register Volume 87, Number 248 (Wednesday, December 28, 2022)]
[Notices]
[Pages 79856-79857]
From the Federal Register Online via the Government Publishing Office [www.gpo.gov]
[FR Doc No: 2022-28219]


-----------------------------------------------------------------------

DEPARTMENT OF COMMERCE

Foreign-Trade Zones Board

[B-64-2022]


Foreign-Trade Zone (FTZ) 75--Phoenix, Arizona; Notification of 
Proposed Production Activity; TSMC Arizona Corporation (Semiconductor 
Wafers); Phoenix, Arizona

    TSMC Arizona Corporation submitted a notification of proposed 
production activity to the FTZ Board (the Board) for its facility in 
Phoenix, Arizona within Subzone 75O. The notification conforming to the 
requirements of the Board's regulations (15 CFR 400.22) was received on 
December 13, 2022.

[[Page 79857]]

    Pursuant to 15 CFR 400.14(b), FTZ production activity would be 
limited to the specific foreign-status material(s)/component(s) and 
specific finished product(s) described in the submitted notification 
(summarized below) and subsequently authorized by the Board. The 
benefits that may stem from conducting production activity under FTZ 
procedures are explained in the background section of the Board's 
website--accessible via www.trade.gov/ftz.
    The proposed finished product is semiconductor wafers (duty rate is 
duty-free).
    The proposed foreign-status materials and components include: 
methane (liquid; gas); chlorine; hydrogen; helium; xenon; nitrogen; 
acids (hydrochloric; nitric; phosphoric; hydrofluoric also known as 
hydrogen fluoride); hydrogen chloride; acid based solutions 
(phosphoric; acetic; nitric); silicate reagent; hydrogen bromide; 
carbon dioxide; silica; carbon monoxide; dinitrogen monoxide also known 
as nitrous oxide; nitric oxide; sulfur dioxide; boron trichloride; 
dichlorosilane; silane; silicon tetrachloride; chlorine trifluoride; 
diiodosilane; nitrogen trifluoride; anhydrous ammonia; ammonia; 
potassium hydroxide; slurries (potassium hydroxide based; cerium 
hydroxide based; polyglycerol polymer based; acetic acid based; 
ammonium hydroxide based; amorphous silica based; cerium dioxide based; 
potassium hydroxide based; silica based; tetraethylammonium hydroxide 
based; silica and phosphoric acid based); sulfur hexafluoride gas; 
tungsten hexafluoride; titanium tetrachloride; carbonyl sulfide; 
solutions (copper sulphate; potassium chloride electrode filling; 
hydrocarbon deposition; N-methylethanolamine; potassium chloride based; 
methyl 2-hydroxyisobutyrate based photoresist; propylene glycol 
monomethyl ether acetate based photoresist; surfactant; triethanolamine 
based; 4-morpholinecarbaldehyde based; ammonium fluoride based; cobalt 
based; ethylene glycol based; tetrahydrothiophene-1,1-dioxide based); 
hydrogen peroxide; disilane; n-octane; ethyne also known as acetylene; 
trifluoromethane; tetrafluoromethane also known as perfluromethane; 
hexafluoro-1,3-butadiene; octafluorocyclobutane; alcohols (isopropyl; 
tert-butyl); hexachlorodisilane; 2-heptanone; cyclohexanone; 
cyclopentanone; butyl acetate; propylene glycol monomethyl ether 
acetate; pentakis(dimethylamino)tantalum(V) powder; 
tetrakis(methylethylamino)zirconium; developer solutions 
(tetramethylammonium hydroxide; isobutyl propionate based); 
bis(diethylamino)silane; hexamethyldisilazane photoresist; N,N-bis(1-
methylethyl)silanamine; tetramethylsilane; triethylaluminum; 
trimethylaluminum; trimethylsilane; butyrolactone; 2-propanol, 1-
methoxy-, 2-acetate based undercoat material; wafer cleaning solutions 
(butoxyethanol based; ethanolamine based; hydroxyethanediphosphonic 
acid based); mixtures (photoresist chemical; diborane and argon; 
diborane and hydrogen; fluorine and nitrogen; helium and nitrogen; 
helium based compressed gas; hydrogen and argon; hydrogen and helium; 
hydrogen and nitrogen; methane and argon; oxygen and helium; xenon and 
hydrogen); cleaning solvents (dimethyl sulfoxide based; 
tetramethylammonium hydroxide based); propylene glycol monomethylether 
based solvents; semi-processed semiconductor silicon wafers (doped; 
raw; reclaimed); benzotriazole based cleaning solutions; anti-
reflective photoresist chemical coatings; copper anode discs; and, 
sputtering targets (cobalt; copper; tantalum; titanium) (duty rate 
ranges from duty-free to 6.5%). The request indicates that certain 
materials/components are subject to duties under section 301 of the 
Trade Act of 1974 (section 301), depending on the country of origin. 
The applicable section 301 decisions require subject merchandise to be 
admitted to FTZs in privileged foreign status (19 CFR 146.41).
    Public comment is invited from interested parties. Submissions 
shall be addressed to the Board's Executive Secretary and sent to: 
[email protected]. The closing period for their receipt is February 6, 
2023.
    A copy of the notification will be available for public inspection 
in the ``Online FTZ Information System'' section of the Board's 
website.
    For further information, contact Juanita Chen at 
[email protected].

    Dated: December 21, 2022.
Andrew McGilvray,
Executive Secretary.
[FR Doc. 2022-28219 Filed 12-27-22; 8:45 am]
BILLING CODE 3510-DS-P