[Federal Register Volume 71, Number 233 (Tuesday, December 5, 2006)]
[Notices]
[Page 70511]
From the Federal Register Online via the Government Publishing Office [www.gpo.gov]
[FR Doc No: E6-20582]


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DEPARTMENT OF COMMERCE

National Institute of Standards and Technology


Jointly Owned Invention Available for Licensing

AGENCY: National Institute of Standards and Technology, Commerce

ACTION: Notice.

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SUMMARY: The invention listed below is jointly owned by the U.S. 
Government, as represented by the Department of Commerce, and Cree Inc. 
The Department of Commerce's interest in the invention is available for 
licensing, in accordance with 35 U.S.C. 207 and 37 CFR part 404 to 
achieve expeditious commercialization of results of federally funded 
research and development.

FOR FURTHER INFORMATION CONTACT: Technical and licensing information on 
this invention may be obtained by writing to: National Institute of 
Standards and Technology, Office of Technology Partnerships, Attn: Mary 
Clague, Building 222, Room A155, Gaithersburg, MD 20899. Information is 
also available via telephone: 301-975-4188, fax 301-869-2751, or e-
mail: [email protected]. Any request for information should include 
the NIST Docket number or Patent number and title for the invention as 
indicated below.
    The invention available for licensing is:

[DOCKET NUMBER 06-008US]

    Title: Power Switching Semiconductor Devices Including Rectifying 
Junction-Shunts.
    Abstract: A semiconductor device includes a drift layer having a 
first conductivity type and a body region adjacent the drift layer. The 
body region has a second conductivity type opposite the first 
conductivity type and forms a p-n junction with the drift layer. The 
device further includes a contactor region in the body region and 
having the first conductivity type, and a shunt channel region 
extending through the body region from the contactor region to the 
drift layer. The shunt channel region has the first conductivity type. 
The device further includes a first terminal in electrical contact with 
the body region and the contactor region, and a second terminal in 
electrical contact with the drift layer. The shunt channel region has a 
length, thickness and doping concentration selected that: (1) The shunt 
channel region is fully depleted when zero voltage is applied across 
the first and second terminals, (2) the shunt channel becomes 
conductive at voltages less than the built-in potential of the drift 
layer to body region p-n junction, and/or (3) the shunt channel is not 
conductive for voltages that reverse biase the p-n junction between the 
drift region and the body region.

    Dated: November 29, 2006.
James E. Hill,
Acting Deputy Director.
 [FR Doc. E6-20582 Filed 12-4-06; 8:45 am]
BILLING CODE 3510-13-P