[Federal Register Volume 63, Number 7 (Monday, January 12, 1998)]
[Notices]
[Page 1828]
From the Federal Register Online via the Government Publishing Office [www.gpo.gov]
[FR Doc No: 98-656]


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DEPARTMENT OF COMMERCE

National Institute of Standards and Technology


Announcement of a Public Meeting To Discuss the Development of 
Methods for Micromachining Electrical Test Structures Replicated in 
Silicon-On-Insulator Films To Enable the Use of High-Resolution 
Transmission-Electron Microscopy for CD-Metrology

AGENCY: National Institute of Standards and Technology, Commerce.

ACTION: Notice of public meeting.

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SUMMARY: The National Institute of Standards and Technology (NIST) 
invites interested parties to attend a meeting on January 30, 1998, to 
discuss the development of Methods for Micromachining Electrical Test 
Structures Replicated in Silicon-On-Insulator Films to Enable the Use 
of High-Resolution Transmission-Electron Microscopy for CD-Metrology. 
Attendees will be expected to sign a non-disclosure agreement before 
participating in the meeting.

DATES: The Meeting will take place at 9 a.m. on January 30, 1998. 
Interested parties should contact NIST to confirm their interest at the 
address, telephone number, or FAX number shown below.

ADDRESSES: The meeting will take place at Conference Room 4020, 
National Institute of Standards and Technology, Boulder, Colorado. 
Inquiries should be sent to Room B360, Building 225, National Institute 
of Standards and Technology, Gaithersburg, MD 20899-0001.

FOR FURTHER INFORMATION CONTACT:
Michael Cresswell, 301-975-2072; FAX 301-948-4081; e-mail: 
[email protected].

SUPPLEMENTARY INFORMATION: Any development program subsequent to the 
meeting will be within the scope and confines of the Federal Technology 
Transfer Act of 1986 (Pub. L. 99-502, 15 U.S.C. 3710a), which provides 
federal laboratories, including NIST, with the authority to enter into 
cooperative research agreements with qualified parties. Under this law, 
NIST may contribute personnel, equipment, and facilities but no funds 
to the cooperative research program. This is not a grant program.
    NIST and Sandia National Laboratories, in collaboration with 16 
industry partners and SEMATECH, have recently completed an evaluation 
of the first of two types of SOI films for linewidth reference-material 
applications. The results have indicated that if a means of certifying 
the electrical widths of reference features could be found, then a 
range of low-cost reference materials for linewidth and related 
dimensions could be developed for future SIA Roadmap applications.

    Dated: January 6, 1998.
Michael R. Rubin,
Deputy Chief Counsel.
[FR Doc. 98-656 Filed 1-9-98; 8:45 am]
BILLING CODE 3510-13-M