[Federal Register Volume 61, Number 163 (Wednesday, August 21, 1996)]
[Notices]
[Page 43230]
From the Federal Register Online via the Government Publishing Office [www.gpo.gov]
[FR Doc No: 96-21263]


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DEPARTMENT OF COMMERCE
National Institute of Standards and Technology


Notice of Government Owned Invention Available for Licensing

AGENCY: National Institute of Standards and Technology, Commerce.

SUMMARY: The invention listed below is owned by the U.S. Government, as 
represented by the Department of Commerce, and is available for 
licensing in accordance with 35 U.S.C. 207 and 37 CFR Part 404 to 
achieve expeditious commercialization of results of federally funded 
research and development.

FOR FURTHER INFORMATION CONTACT: Technical and licensing information on 
this invention may be obtained by writing to: Marcia Salkeld, National 
Institute of Standards and Technology, Office of Technology 
Partnerships, Building 820, Room 213, Gaithersburg, MD 20899; Fax 301-
869-2751. Any request for information should include the NIST Docket 
No. and Title for the relevant invention as indicated below.

SUPPLEMENTARY INFORMATION: NIST may enter into one or more Cooperative 
Research and Development Agreements (``CRADA'') with licensees to 
perform further research on the invention for purposes of 
commercialization. NIST may grant licensees an option to negotiate for 
exclusive licenses to any jointly owned inventions which arise from the 
CRADAs as well as an option to negotiate for exclusive royalty-bearing 
licenses for NIST employee inventions which arise from the CRADAs.
    The invention available for licensing is:

NIST Docket No. 96-009

    Title: Interferometric Thickness Variation Test Method For Windows 
and Silicon Wafers Using a Diverging Wavefront
    Description: A non-contact method of using an infrared 
interferometer for determining a full aperture map of thickness 
variation and central thickness of silicon wafers and windows. The IR 
interferometer maps the thickness variation over the entire wafer 
surface in one rapid measurement. A second measurement with the same 
device determines the central thickness of the wafer. If the wafer has 
substantial bow, a third measurement with the wafer reversed permits 
determination of the bow and separation of its effect from the 
thickness variation measurement.

    Dated: August 12, 1996.
Samuel Kramer,
Associate Director.
[FR Doc. 96-21263 Filed 8-20-96; 8:45 am]
BILLING CODE 3510-13-M