[Congressional Record Volume 156, Number 17 (Thursday, February 4, 2010)]
[Extensions of Remarks]
[Pages E159-E160]
From the Congressional Record Online through the Government Publishing Office [www.gpo.gov]




   THE BENEFITS OF FEDERAL INVESTMENT IN THE DEVELOPMENT OF SILICON 
 CARBIDE POWER MODULES AND NANO-TECHNOLOGY FOR ANTI-REVERSE ENGINEERING

                                 ______
                                 

                           HON. JOHN BOOZMAN

                              of arkansas

                    in the house of representatives

                       Thursday, February 4, 2010

  Mr. BOOZMAN. Madam Speaker, contained in H.R. 3326, the Department of 
Defense Appropriations Act for FY 2010, is funding for investment in 
projects in Arkansas, which I requested for FY 2010. The legislation 
contains funding for the development of Nanotechnology for Anti-Reverse 
Engineering in the FY10 Defense Appropriations bill, Research, 
Development Test & Evaluation, Navy, account by Space Photonics, Inc., 
700 Research Center Blvd., Fayetteville, AR 72701. This project will 
develop and integrate nanotechnology-based anti tamper solutions for 
unmanned aerial vehicles and prepare for flight qualification. Anti 
tamper capability is required for all DoD new start programs as of 
2001, all pre-planned product improvement (P3I) or technology insertion 
efforts, and all programs that did not reach Milestone B by May 1, 
2000. U.S. anti tamper technology must continually evolve and improve 
to keep ahead of the capabilities of our adversaries. As such, 
developing and maintaining a strong technology base is a stated 
objective for the DoD anti tamper program. Electronics are a major area 
of vulnerability in weapon systems, particularly advanced microchip and 
circuit design used on sensors and communications equipment flying on 
UAVs.
  Nanotechnology is proving to be a very promising area for AT 
solutions. Nanotechnology based technologies and techniques have the 
potential to be undetectable and have been demonstrated to inhibit 
circuit exploitation and/or reverse engineering. Nanotechnology 
techniques can also support passive self-destruction of devices.
  Funding was also included for Silicon Carbide Power Modules for the 
F-35 Joint Strike Fighter by Arkansas Power Electronics International, 
Inc., 535 W. Research Center Blvd., Fayetteville, AR 72701. This 
project will produce flight-qualified silicon carbide (SiC) motor 
drives for aircraft flight control systems. SiC electronics are 
required to accommodate the high power densities and voltages necessary 
for motor drive operation. The Air Force's More Electric and All 
Electric Aircraft (MEA/AEA) design philosophy mandates the replacement 
of costly and bulky mechanical hydraulic aircraft flight control 
systems with lighter weight, high-reliability, low-maintenance electric 
motors and drives. SiC motor drives provide an order of magnitude size 
reduction and high temperature operational capability for the F-35's 
flight control surface actuator drives, which are critical components 
of the aircraft's combat performance capability.
  Conversion to SiC motor drives can contribute significantly to 
meeting aircraft weight reduction targets for the production version of 
the F-35, as well as enable improved performance of UAVs and hybrid 
electric military vehicles. For these reasons, I believe these to be an 
appropriate investment of taxpayer dollars.

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