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Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors
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Citations are generated automatically from bibliographic data as a convenience and may not be complete or accurate.
Army Department, Defense Department. "Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors". Government. Defense Department, December 1, 2017. https://www.govinfo.gov/app/details/GOVPUB-D101-PURL-gpo116815
Army Department, Defense Department. (2017, December 1). Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors. [Government]. Defense Department. https://www.govinfo.gov/app/details/GOVPUB-D101-PURL-gpo116815
Army Department, Defense Department. Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors. Defense Department, (1 Dec 2017), https://www.govinfo.gov/app/details/GOVPUB-D101-PURL-gpo116815
Army Department, Defense Department, Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors, GovInfo, (December 1, 2017), https://www.govinfo.gov/app/details/GOVPUB-D101-PURL-gpo116815